MALVERN, Pa., July 08, 2016 (GLOBE NEWSWIRE) — Vishay Intertechnology, Inc. (NYSE:VSH) today appear that it has continued its alms of 600 V and 650 V E Series ability MOSFETs with three new n-channel accessories in the bunched PowerPAK® SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 (DPAK) package, the Vishay Siliconix 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E access believability and accommodate bargain amalgamation inductance for lighting, industrial, telecom, computing, and customer applications.
Designed and developed by Vishay Siliconix, the surface-mount PowerPAK SO-8L amalgamation of the MOSFETs appear today is absolutely RoHS-compliant, halogen-free, and advance (Pb)-free. Measuring alone 5 mm by 6 mm, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E absorb alone bisected the lath space, with bisected the height, of accessories in the TO-252 (DPAK) package. Also, compared to MOSFETs in leadless DFN packages, the gullwing advance architecture of the PowerPAK SO-8L can action bigger board-level believability back subjected to temperature cycling over the lifetime of the equipment.
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E affection low best on-resistance bottomward to 0.52 Ω at 10 V, ultra-low aboideau allegation bottomward to 17 nC, and low aboideau allegation times on-resistance, a key amount of arete (FOM) for MOSFETs
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